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产品编号:
产品名称:JK9610A Field effect tube tester
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产品备注:
产品类别:JK9610A Field effect tube tester

The difference between 9610A and 9612:

9610A can measure three parameters: A:, breakdown voltage, VDSS, turn-on voltage, VGS, Gfs transconductance

B: three parameters can only be measured by one item and one item

 

9612, you can measure three parameters: A: open voltage, VGS Gfs transconductance, through state resistor Ron, interelectrode capacitor Cir, four parameters together to measure

B: is efficient,

C: belt sorting alarm, suitable for large quantity incoming inspection

 

I. overview

Type JK9610A power FET tester is a novel all digital display type power FET parameter test device, can be used for the nominal current of about 2-85A,Test of main parameters of N channel power field effect tube with less than 300W power。It can accurately measure the breakdown voltage VDSS, the gate open voltage VGS (th) and the amplification characteristic parameter transconductance Gfs, especially the transconductance Gfs test current can reach 50A, because the pulse current test method is adopted,Even in high current test, it will not cause any damage to the device under test, and can also test the parameter conformance of the field effect transistor under the condition of large current;The instrument can be used for the measurement of IGBT parameters at the same current level;The instrument is also an electronic component withstanding voltage test device with very good performance,Its test when the leakage current pressure 1mA, 250uA, 25uA, three blocks can be selected。The instrument is mainly used for the quality inspection of power field effect transistors and IGBT, the matching of parameters and the withstanding voltage test of other electronic components。The instrument is divided into two kinds of N channel guide type test instrument and P channel guide type tester。 The utility model has the advantages of beautiful appearance, stable performance, accurate measurement, simple operation and convenient and safe use。

 

 

Two, the main technical performance

1, the breakdown voltage of VDSS measuring range: 0 - 1999V, accuracy: less than 2.5%.

2, IDSS can be divided into three blocks: 1mA, 250uA, 25uA。

3, gate open voltage VGS (th) measurement range: 0 - 10V. Accuracy: less than 5%.

4, Gfs transconductance test current Idm: not less than 1 - 50 A continuously adjustable accuracy: less than 10%.

5, Gfs transconductance test range: 1 - 100.

 

Three, the main test function

1. Test of breakdown voltage VDSS, gate open voltage VGS (th) and transconductance Gfs of power field effect transistor.

2, IGBT breakdown voltage V (BR) ces, gate open voltage VGE (th), transconductance Gfs test。

3 、 conformance test of power field effect transistors and IGBT in any current condition below 50A, which can be used for pairing.

4. Tests for other current and power MOSFET and IGBT: (see below).

5. Testing of breakdown voltage of various kinds of crystal triode, diode and regulator tube.

6 、 varistor voltage test, etc.

 

 

Four 、 test box and test line

1, the use of test box can easily test TO-126, TO-220, TOP-3 and other similar packaging power MOSFET and IGBT。

2, the use of test line can measure other metal, module and other forms of packaging power field effect tube and IGBT.

 

Test example

Model 
 
breakdown voltage
Vdss
Turn-on voltage
Vgs(th)
transconductance S
Gfs
Gfs
Test current
Nominal current
ID
Nominal power
PD
encapsulation
IRF640
Basic parameter
200V
2-4V
≥6。8
11A
18A
150W
TO-220
 
Actual measurement parameter
225V
3.0V
12
11A
     
IRF1010
Bscic parameter
60V
2-4V
≥69
50A
84A
200W
TO-220
 
Actual measurement parameter
66V
3.2V
67
50A
     
IRF3205
Bscic parameter
55V
2-4V
≥44
62A
110A
200W
TO-220
 
Actual measurement parameter
60V
2.9V
68
60A
     
FQP70N08
Bscic parameter
80V
2-4V
41
35A
70A
155W
TO-220
 
Actual measurement parameter
86V
3。2V
46
35A
     
75NF75
Bscic parameter
75V
2-4V
20
40A
80A
300W
TO-220
 
Actual measurement parameter
81V
3。6V
52
40A
     
IRFP064
Bscic parameter
55V
2-4V
≥42
59A
110A
200W
TO-3P
 
Actual measurement parameter
67V
2.5V
57
60A
     
2SK1120
Bscic parameter
1000V
2。5-5V
4
4A
8A
150W
TO-3P
 
Actual measurement parameter
1086V
2.3V
5
4A
     
G160N60
Bscic parameter
600V
3。5-6。5V
*
80A
160A
250W
TO-247
 
Actual measurement parameter
626V
3.9V
35
60A
     
H40T120
Bscic parameter
1200V
5-6。5V
21
40A
75A
270W
TO-247
 
Actual measurement parameter
1390V
5.7V
20
40A
     
60N170D
Bscic parameter
1700V
3.5-7.5V
   
60A
200W
TO-247
 
Actual measurement parameter
1798V
4.8V
30
60A
   
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